型号:

IXFK360N10T

RoHS:无铅 / 符合
制造商:IXYS描述:MOSFET N-CH 100V 360A TO-264
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IXFK360N10T PDF
标准包装 25
系列 GigaMOS™ HiPerFET™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 360A
开态Rds(最大)@ Id, Vgs @ 25° C 2.9 毫欧 @ 100A,10V
Id 时的 Vgs(th)(最大) 5V @ 3mA
闸电荷(Qg) @ Vgs 525nC @ 10V
输入电容 (Ciss) @ Vds 33000pF @ 25V
功率 - 最大 1250W
安装类型 通孔
封装/外壳 TO-264-3,TO-264AA
供应商设备封装 TO-264
包装 管件
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